Fivefold Peak Power Boost in HBT-Driven GaAs Collapsing-Field-Domain-Based Sub-THz Source
Masyukov, Maxim; Vainshtein, Sergey; Grigorev, Roman; Taylor, Zachary (2023-08-04)
Masyukov, Maxim
Vainshtein, Sergey
Grigorev, Roman
Taylor, Zachary
IEEE
04.08.2023
M. Masyukov, S. Vainshtein, R. Grigorev and Z. Taylor, "Fivefold Peak Power Boost in HBT-Driven GaAs Collapsing-Field-Domain-Based Sub-THz Source," in IEEE Electron Device Letters, vol. 44, no. 10, pp. 1716-1719, Oct. 2023, doi: 10.1109/LED.2023.3302015
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© 2023 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists,or reuse of any copyrighted component of this work in other works.
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Julkaisun pysyvä osoite on
https://urn.fi/URN:NBN:fi:oulu-202311273359
https://urn.fi/URN:NBN:fi:oulu-202311273359
Tiivistelmä
Abstract
Miniature on-chip sources based on the collapsing field domain phenomenon in GaAs have advanced compact sub-picosecond time-domain imaging schemes operating in the 100–250 GHz frequency range. Efforts have been done to broaden the emission band of on-chip sources towards 400 GHz, but increasing the peak power of the emitted picosecond-range pulses remains physically challenging but practically important. In this work, a fivefold increase in peak power has been achieved by replacing the previously used hetero-bipolar-based collapsing field domain source operating in self-oscillating mode with a bipolar-based source externally pulsed by a hetero-bipolar driver. Importantly, the suggested solution unaffected the compactness of the source and facilitates its application in time domain imaging.
Miniature on-chip sources based on the collapsing field domain phenomenon in GaAs have advanced compact sub-picosecond time-domain imaging schemes operating in the 100–250 GHz frequency range. Efforts have been done to broaden the emission band of on-chip sources towards 400 GHz, but increasing the peak power of the emitted picosecond-range pulses remains physically challenging but practically important. In this work, a fivefold increase in peak power has been achieved by replacing the previously used hetero-bipolar-based collapsing field domain source operating in self-oscillating mode with a bipolar-based source externally pulsed by a hetero-bipolar driver. Importantly, the suggested solution unaffected the compactness of the source and facilitates its application in time domain imaging.
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