Raman spectroscopy of GaSb1-xBixalloys with high Bi content
Souto, S.; Hilska, J.; Galvão Gobato, Y.; Souza, D.; Andrade, M. B.; Koivusalo, E.; Puustinen, J.; Guina, M. (2020-05-20)
Souto, S.
Hilska, J.
Galvão Gobato, Y.
Souza, D.
Andrade, M. B.
Koivusalo, E.
Puustinen, J.
Guina, M.
20.05.2020
202103
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Julkaisun pysyvä osoite on
https://urn.fi/URN:NBN:fi:tuni-202111058223
https://urn.fi/URN:NBN:fi:tuni-202111058223
Kuvaus
Peer reviewed
Tiivistelmä
We report on the crystal morphology and Raman scattering features of high structural quality GaSb1-xBix alloys grown by molecular beam epitaxy with a high Bi content (x up to ∼0.10). The Raman spectra were measured at room temperature with different laser excitation wavelengths of 532 nm, 633 nm, and 785 nm. We observed well-defined Bi-induced Raman peaks associated with atomic Bin clusters and GaBi vibrational modes. Remarkably, some Bi-induced Raman modes were strongly enhanced when the laser energy was selected near an optical transition for the 5.8%Bi sample. This effect was attributed to a Raman resonant effect near an excited optical transition of the GaSbBi layer and has been used to identify the nature of the observed Raman peaks.
Kokoelmat
- TUNICRIS-julkaisut [16977]