Tantalum-based diffusion barriers for copper metallization
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Doctoral thesis (article-based)
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Date
2001-12-14
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Language
en
Pages
58, [66]
Series
Report series / Helsinki University of Technology, Laboratory of Electronics Production Technology, 6
Abstract
Interfacial reactions between Cu and Si with different Ta-based diffusion barriers are investigated by means of the combined thermodynamic-kinetic and microstructural analysis. The reaction mechanisms and the related microstructures in the Si/Ta/Cu, Si/TaC/Cu and Si/Ta2N/Cu metallization systems are studied experimentally and theoretically by utilizing the ternary Si-Ta-Cu, Si-Ta-C, Si-Ta-N, Ta-C-Cu, and Ta-N-Cu phase diagrams as well as the activity diagrams calculated at different temperatures. The effects of oxygen on the reactions in the Si/Ta/Cu and Si/TaC/Cu metallization systems are investigated by employing also the evaluated Ta-O and Ta-C-O phase diagrams. The experimental investigations are carried out with the help of sheet resistance measurements, x-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), scanning electron microscopy (SEM), secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM). It is shown that by using the combined thermodynamic-kinetic approach a better understanding about the reactions taking place in the Si/Cu diffusion couples with different Ta-based diffusion barriers can be achieved. The diffusion barrier solutions using Ta are good candidates for practical applications.Description
Keywords
diffusion barriers, phase diagrams, thermodynamics, microelectronics, tantalum
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Parts
- Additional errata file available.
- T. Laurila, K. Zeng, J. Molarius, I. Suni, and J.K. Kivilahti, Chemical Stability of Tantalum Diffusion Barrier Between Cu and Si, Thin Solid Films, 373, (2000), pp. 64-67. [article1.pdf] © 2000 Elsevier Science. By permission.
- T. Laurila, K. Zeng, J. Molarius, I. Suni, and J.K. Kivilahti, Failure Mechanism of Ta Diffusion Barrier Between Cu and Si, Journal of Applied Physics, 88, (2000), pp. 3377-3384. [article2.pdf] © 2000 American Institute of Physics. By permission.
- T. Laurila, K. Zeng, J. Molarius, I. Suni, and J.K. Kivilahti, Effect of Oxygen on the Reactions in the Si/Ta/Cu Metallization System, Journal of Materials Research, 16, (2001), pp. 2939-2946. [article3.pdf] © 2001 Materials Research Society. By permission.
- T. Laurila, K. Zeng, J. Molarius, T. Riekkinen, I. Suni, and J.K. Kivilahti, Tantalum Carbide and Nitride Diffusion Barriers for Cu Metallisation, Microelectronics Engineering, 60, (2001), pp. 71-80. [article4.pdf] © 2001 Elsevier Science. By permission.
- T. Laurila, K. Zeng, J. Molarius, I. Suni, and J.K. Kivilahti, Stability of TaC Diffusion Barrier Between Si and Cu, HUT Internal Report, HUT-EPT-7, ISBN 951-22-5777-7, (2001). This report is composed of two manuscripts: "TaC as a Diffusion Barrier Between Si and Cu" (submitted to Journal of Applied Physics) and "Amorphous Layer Formation at the TaC/Cu Interface in the Si/TaC/Cu Metallization System" (submitted to Applied Physics Letters). [article5.pdf] © 2001 by authors & American Institute of Physics.
