Ka-band 3-stack power amplifier with 18.8 dBm P<sub>sat</sub> and 23.4 % PAE using 22nm CMOS FDSOI technology
Aikio, Janne P.; Hietanen, Mikko; Tervo, Nuutti; Rahkonen, Timo; Pärssinen, Aarno (2019-05-09)
J. P. Aikio, M. Hietanen, N. Tervo, T. Rahkonen and A. Pärssinen, "Ka-Band 3-Stack Power Amplifier with 18.8 dBm Psat and 23.4 % PAE Using 22nm CMOS FDSOI Technology," 2019 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR), Orlando, FL, USA, 2019, pp. 1-3. doi: 10.1109/PAWR.2019.8708719
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https://urn.fi/URN:NBN:fi-fe2019081223985
Tiivistelmä
Abstract
This paper presents a fully integrated, three-stack power amplifier for 5G wireless systems, designed and fabricated using 22nm CMOS FDSOI technology. The frequency of operation is from 25 GHz to 30.5 GHz, with a maximum 3 dB bandwidth of 5.5 GHz and a maximum gain of 9.9 dB. Maximum RF output power, power-added efficiency (PAE) and output 1 dB compression point are 18.8 dBm, 23.4% and 14.9dBm, respectively, achieved at 28.5 GHz.
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