InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm
Moriya, Paulo H.; Casula, Riccardo; Chappel, George A.; Parrotta, Daniele C.; Ranta, Sanna; Kahle, Hermann; Guina, Mircea; Hastie, Jennifer E. (2021)
Moriya, Paulo H.
Casula, Riccardo
Chappel, George A.
Parrotta, Daniele C.
Ranta, Sanna
Kahle, Hermann
Guina, Mircea
Hastie, Jennifer E.
2021
Julkaisun pysyvä osoite on
https://urn.fi/URN:NBN:fi:tuni-202105265453
https://urn.fi/URN:NBN:fi:tuni-202105265453
Kuvaus
Peer reviewed
Tiivistelmä
We report the design, growth, and characterization of an AlGaInP-based VECSEL, designed to be optically-pumped with an inexpensive high power blue InGaN diode laser, for emission around 689 nm. Up to 140 mW output power is achieved in a circularly-symmetric single transverse (TEM00) and single longitudinal mode, tunable from 683 to 693 nm. With intensity stabilization of the pump diode and frequency-stabilization of the VECSEL resonator to a reference cavity via the Pound-Drever-Hall technique, we measure the power spectral density of the VECSEL frequency noise, reporting sub-kHz linewidth at 689 nm. The VECSEL relative intensity noise (RIN) is <-130 dBc/Hz for all frequencies above 100 kHz. This compact laser system is suitable for use in quantum technologies, particularly those based on laser-cooled and trapped strontium atoms.
Kokoelmat
- TUNICRIS-julkaisut [17109]