Enhancement of EQE for MBE grown InAs/GaAs Quantum Dot Solar Cell with Back Reflector
Aho, Timo; Tukiainen, Antti; Ranta, Sanna; Elsehrawy, Farid; Raappana, Marianna; Isoaho, Riku; Aho, Arto; Cappelluti, Federica; Guina, Mircea (2020)
Avaa tiedosto
Lataukset:
Aho, Timo
Tukiainen, Antti
Ranta, Sanna
Elsehrawy, Farid
Raappana, Marianna
Isoaho, Riku
Aho, Arto
Cappelluti, Federica
Guina, Mircea
IEEE
2020
Julkaisun pysyvä osoite on
https://urn.fi/URN:NBN:fi:tuni-202101181406
https://urn.fi/URN:NBN:fi:tuni-202101181406
Kuvaus
Peer reviewed
Tiivistelmä
We report on molecular beam epitaxy grown InAs/GaAs quantum dot solar cells incorporating thin-film configuration with back surface reflectors. External quantum efficiency measurements reveal two times higher current generation for the quantum dots with the thin-film solar cell with the back reflector compared to a standard reference solar cell without back reflector. A high open-circuit voltage of 0.884 V is demonstrated. Furthermore, the benefits of using more advanced designs for a back reflector employing pyramidal diffraction gratings are discussed.
Kokoelmat
- TUNICRIS-julkaisut [16726]