Fabrication and characterization of broadband superluminescent diodes for 2 μm wavelength
Zia, Nouman; Viheriälä, Jukka; Koskinen, Riku; Koskinen, Mervi; Suomalainen, Soile; Guina, Mircea (2016)
Zia, Nouman
Viheriälä, Jukka
Koskinen, Riku
Koskinen, Mervi
Suomalainen, Soile
Guina, Mircea
SPIE
2016
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX
Julkaisun pysyvä osoite on
https://urn.fi/URN:NBN:fi:tty-201706201608
https://urn.fi/URN:NBN:fi:tty-201706201608
Kuvaus
Peer reviewed
Tiivistelmä
Single-mode superluminescent diodes operating at 2 μm wavelength are reported. The structures are based on GaSb material systems and were fabricated by molecular beam epitaxy. Several waveguide designs have been implemented. A continuous-wave output power higher than 35 mW is demonstrated for a spectrum centered at around 1.92 μm. We show that the maximum output power of the devices is strongly linked to spectrum width. Device having low output power exhibit a wide spectrum with a full-width half-maximum (FWHM) as large as 209 nm, while devices with highest output power exhibit a narrower spectrum with about 61 nm FWHM.
Kokoelmat
- TUNICRIS-julkaisut [16944]