Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE
Aho, Arto; Isoaho, Riku; Tukiainen, Antti; Polojärvi, Ville; Raappana, Marianna; Aho, Timo; Guina, Mircea (2017)
Aho, Arto
Isoaho, Riku
Tukiainen, Antti
Polojärvi, Ville
Raappana, Marianna
Aho, Timo
Guina, Mircea
EDP Sciences
2017
11th European Space Power Conference, 3-7 October 2016 Thessaloniki, Greece
Julkaisun pysyvä osoite on
https://urn.fi/URN:NBN:fi:tty-201706201606
https://urn.fi/URN:NBN:fi:tty-201706201606
Kuvaus
Peer reviewed
Tiivistelmä
Dilute nitride arsenide antimonide compounds offer widely tailorable band-gaps, ranging from 0.8 eV to 1.4 eV, for the development of lattice-matched multijunction solar cells with three or more junctions. Here we report on the performance of GaInP/GaAs/GaInNAsSb solar cell grown by molecular beam epitaxy. An efficiency of 27% under AM0 conditions is demonstrated. In addition, the cell was measured at different temperatures. The short circuit current density exhibited a temperature coefficient of 0.006 mA/cm2/°C while the corresponding slope for the open circuit voltage was −6.8 mV/°C. Further efficiency improvement, up to 32%, is projected by better current balancing and structural optimization.
Kokoelmat
- TUNICRIS-julkaisut [17001]