31% European InGaP/GaAs/InGaNAs Solar Cells For Space Application
Campesato, Roberta; Tukiainen, Antti; Aho, Arto; Gori, Gabriele; Isoaho, Riku; Greco, Erminio; Guina, Mircea (2017)
Campesato, Roberta
Tukiainen, Antti
Aho, Arto
Gori, Gabriele
Isoaho, Riku
Greco, Erminio
Guina, Mircea
EDP Sciences
2017
Proceedings of the 11th European Space Power Conference 2016
Julkaisun pysyvä osoite on
https://urn.fi/URN:NBN:fi:tty-201706201604
https://urn.fi/URN:NBN:fi:tty-201706201604
Kuvaus
Peer reviewed
Tiivistelmä
We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes. The prototype cells comprise of InGaNAs (Indium Gallium Nitride Arsenide) bottom junction grown on a GaAs (Gallium Arsenide) substrate by MBE and middle and top junctions deposited by MOCVD. Repeatable cell characteristics and uniform efficiency pattern over 4-inch wafers were obtained. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high-efficiency space tandem solar cells with three or more junctions. Results of radiation resistance of the sub-cells are also presented and critically evaluated to achieve high efficiency in EOL conditions.
Kokoelmat
- TUNICRIS-julkaisut [16740]