High photoresponsivity and broadband photodetection with a band-engineered WSe 2 /SnSe 2 heterostructure

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Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2019-02-21
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Language
en
Pages
13
3173-3185
Series
Nanoscale, Volume 11, issue 7
Abstract
van der Waals (vdW) heterostructures formed by stacking different two-dimensional layered materials have been demonstrated as a promising platform for next-generation photonic and optoelectronic devices due to their tailorable band-engineering properties. Here, we report a high photoresponsivity and broadband photodetector based on a WSe 2 /SnSe 2 heterostructure. By properly biasing the heterostructure, its band structure changes from near-broken band alignment to type-III band alignment which enables high photoresponsivity from visible to telecommunication wavelengths. The highest photoresponsivity and detectivity at 532 nm are ∼588 A W -1 and 4.4 × 10 10 Jones and those at 1550 nm are ∼80 A W -1 and 1.4 × 10 10 Jones, which are superior to those of the current state-of-the-art layered transition metal dichalcogenides based photodetectors under similar measurement conditions. Our work not only provides a new method for designing high-performance broadband photodetectors but also enables a deep understanding of the band engineering technology in the vdW heterostructures possible for other applications, such as modulators and lasers.
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| openaire: EC/H2020/820423/EU//S2QUIP | openaire: EC/FP7/631610/EU//GrabFast
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Citation
Xue, H, Dai, Y, Kim, W, Wang, Y, Bai, X, Qi, M, Halonen, K, Lipsanen, H & Sun, Z 2019, ' High photoresponsivity and broadband photodetection with a band-engineered WSe 2 /SnSe 2 heterostructure ', Nanoscale, vol. 11, no. 7, pp. 3240-3247 . https://doi.org/10.1039/c8nr09248f