Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors

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Conference article in proceedings
Date
2018-05-03
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Mcode
Degree programme
Language
en
Pages
4
1-4
Series
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018, Volume 2018-January
Abstract
The extensive research of aggressively scaled nano-electronic devices necessitates the inclusion of quantum confinement effects and their impact on performance. This work implements a set of multisubband phonon and impurity scattering mechanisms within the Kubo-Greenwood formalism in order to study their impact on the mobility in Si nanowire transistors (NWTs). This 1D treatment has been coupled with a 3D Poisson-2D Schrödinger solver, which accurately captures the effects of quantum confinement on charge dynamics. We also emphasize the importance of using the 1D models to evaluate the geometrical properties on mobility at the scaling limit.
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Keywords
Impurity Scattering, Kubo-Greenwood Formalism, Matthiessen rule, Nanowire FETs, Phonon Scattering
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Citation
Medina-Bailon , C , Sadi , T , Nedjalkov , M , Lee , J , Berrada , S , Carrillo-Nunez , H , Georgiev , V , Selberherr , S & Asenov , A 2018 , Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors . in 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018 . vol. 2018-January , IEEE , pp. 1-4 , Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon , Granada , Spain , 19/03/2018 . https://doi.org/10.1109/ULIS.2018.8354723