MOVPE growth of N-polar AlN on 4H-SiC

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Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2018-04-01
Major/Subject
Mcode
Degree programme
Language
en
Pages
5
12-16
Series
Journal of Crystal Growth, Volume 487
Abstract
We present the effect of miscut angle of SiC substrates on N-polar AlN growth. The N-polar AlN layers were grown on C-face 4H-SiC substrates with a miscut towards 〈1¯100〉 by metal-organic vapor phase epitaxy (MOVPE). The optimal V/III ratios for high-quality AlN growth on 1° and 4° miscut substrates were found to be 20,000 and 1000, respectively. MOVPE grown N-polar AlN layer without hexagonal hillocks or step bunching was achieved using a 4H-SiC substrate with an intentional miscut of 1° towards 〈1¯100〉. The 200-nm-thick AlN layer exhibited X-ray rocking curve full width half maximums of 203 arcsec and 389 arcsec for (0 0 2) and (1 0 2) reflections, respectively. The root mean square roughness was 0.4 nm for a 2 μm×2μm atomic force microscope scan.
Description
Keywords
A1. Polarity, A1. X-ray diffraction, A3. Metal-organic vapor phase epitaxy, B1. Nitrides, B2. Semiconducting aluminum compounds
Other note
Citation
Lemettinen , J , Okumura , H , Kim , I , Kauppinen , C , Palacios , T & Suihkonen , S 2018 , ' MOVPE growth of N-polar AlN on 4H-SiC : Effect of substrate miscut on layer quality ' , Journal of Crystal Growth , vol. 487 , pp. 12-16 . https://doi.org/10.1016/j.jcrysgro.2018.02.013