Ab initio study of point-defects in CdF2

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
1997
Major/Subject
Mcode
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Language
en
Pages
15665-15671
Series
Physical Review B, Volume 56, issue 24
Abstract
The plane-wave pseudopotential method is used to study point defects in CdF2. We present comprehensive results for the native defects as well as for dominant impurities. In addition to Fi, VCd and OF were found to be easily formed compensating acceptors. For In and Ga impurities the experimentally observed large Stokes shift could not be established, and the results rule out symmetric atomic relaxation as the mechanism leading to the bistable behavior. The limitations of the present approach utilizing density-functional theory and the local-density approximation in the case of ionic materials are addressed.
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Keywords
compound semiconductors, electronic structure, point defects
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Citation
Mattila , T , Pöykkö , S & Nieminen , R M 1997 , ' Ab initio study of point-defects in CdF2 ' , Physical Review B , vol. 56 , no. 24 , pp. 15665-15671 . https://doi.org/10.1103/PhysRevB.56.15665