He implantation to control B diffusion in crystalline and preamorphized Si

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Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2008
Major/Subject
Mcode
Degree programme
Language
en
Pages
5
386-390
Series
Journal of Vacuum Science and Technology. Part B., Volume 26, issue 1
Abstract
We demonstrate that He can be a powerful tool to control B diffusion both in crystalline (c-Si) and preamorphized Si (PA-Si). By means of positron annihilation spectroscopy (PAS), we showed in He-implanted c-Si the formation after annealing of large open-volume defects at the implant projected range Rp of He (voids) and of smaller vacancy-type defects toward the surface (nanovoids). In particular, these nanovoids locally suppress the amount of self-interstitials (Is) generated by B implantation, as verified by PAS, eventually reducing B diffusion and leading to a boxlike shape of the B-implanted profile. On the other hand, for B implantation in PA-Si, the authors demonstrated that if He-induced voids are formed between the end-of-range (EOR) defects and the surface, they act as a diffusion barrier for Is coming from the EOR defects. Indeed, this barrier strongly reduces diffusion of B placed in proximity of the surface.
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Keywords
B implantation, He implantation, positron annihilation
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Citation
Bruno , E , Mirabella , S , Priolo , F , Kuitunen , K , Tuomisto , F , Slotte , J , Giannazzo , F , Bongiorno , C , Raineri , V & Napolitani , E 2008 , ' He implantation to control B diffusion in crystalline and preamorphized Si ' , Journal of Vacuum Science and Technology. Part B. , vol. 26 , no. 1 , pp. 386-390 . https://doi.org/10.1116/1.2816927