Light-induced degradation in multicrystalline silicon

Loading...
Thumbnail Image
Journal Title
Journal ISSN
Volume Title
Conference article in proceedings
This publication is imported from Aalto University research portal.
View publication in the Research portal
View/Open full text file from the Research portal
Date
2016-09-25
Major/Subject
Mcode
Degree programme
Language
en
Pages
7
808-814
Series
ENERGY PROCEDIA, Volume 92
Abstract
In this contribution, we provide an insight into the light-induced degradation of multicrystalline (mc-) silicon caused by copper contamination. Particularly we analyze the degradation kinetics of intentionally contaminated B- and Ga-doped mc-Si through spatially resolved photoluminescence (PL) imaging. Our results show that even small copper concentrations are capable of causing a strong LID effect in both B- and Ga-doped samples. Furthermore, the light intensity, the dopant and the grain qualitywere found to strongly impact the degradation kinetics, since faster LID was observed with stronger illumination intensity, B-doping and in the grains featuring low initial lifetime. Interestingly after degradation we also observe the formation of bright denuded zones near the edges of the B-doped grains, which might indicate the possible accumulation of copper impurities at the grain boundaries.
Description
Keywords
Other note
Citation
Inglese , A , Focareta , A , Schindler , F , Schön , J , Lindroos , J , Schubert , M C & Savin , H 2016 , Light-induced degradation in multicrystalline silicon : the role of copper . in Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2016) . vol. 92 , Energy Procedia , Elsevier BV , pp. 808-814 , International Conference on Crystalline Silicon Photovoltaics , Chambéry , France , 07/03/2016 . https://doi.org/10.1016/j.egypro.2016.07.073