Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium

Loading...
Thumbnail Image
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2016-10-31
Major/Subject
Mcode
Degree programme
Language
en
Pages
1-4
Series
Applied Physics Letters, Volume 109, issue 18
Abstract
Highly n-type Ge attained by shallow As implantation and excimer laser annealing was studied with positron annihilation spectroscopy and theoretical calculations. We conclude that a high concentration of vacancy-arsenic complexes was introduced by the doping method, while no sign of vacancies was seen in the un-implanted laser-annealed samples. The arsenic bound to the complexes contributes substantially to the passivation of the dopants.
Description
Keywords
Other note
Citation
Kalliovaara , T , Slotte , J , Makkonen , I , Kujala , J , Tuomisto , F , Milazzo , R , Impellizzeri , G , Fortunato , G & Napolitani , E 2016 , ' Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium ' , Applied Physics Letters , vol. 109 , no. 18 , 182107 , pp. 1-4 . https://doi.org/10.1063/1.4966947