Migration and Localization of Metal Atoms on Strained Graphene

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Journal Title
Journal ISSN
Volume Title
School of Science | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2010
Major/Subject
Mcode
Degree programme
Language
en
Pages
196102/1-4
Series
Physical Review Letters, Volume 105, Issue 19
Abstract
Reconstructed point defects in graphene are created by electron irradiation and annealing. By applying electron microscopy and density functional theory, it is shown that the strain field around these defects reaches far into the unperturbed hexagonal network and that metal atoms have a high affinity to the nonperfect and strained regions of graphene. Metal atoms are attracted by reconstructed defects and bonded with energies of about 2 eV. The increased reactivity of the distorted π-electron system in strained graphene allows us to attach metal atoms and to tailor the properties of graphene.
Description
Keywords
graphene, transition metal atoms
Other note
Citation
Cretu, Ovidiu & Krasheninnikov, Arkady V. & Rodríguez-Manzo, Julio A. & Sun, Litao & Nieminen, Risto M. & Banhart, Florian. 2010. Migration and Localization of Metal Atoms on Strained Graphene. Physical Review Letters. Volume 105, Issue 19. 196102/1-4. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.105.196102.