Identification of the VAl-ON defect complex in AlN single crystals
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Journal Title
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School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2011
Major/Subject
Mcode
Degree programme
Language
en
Pages
081204/1-4
Series
Physical Review B, Volume 84, Issue 8
Abstract
In this Rapid Communication, we report positron annihilation results on in-grown and proton irradiation-induced vacancies and their decoration in aluminium nitride (AlN) single crystals. By combining positron lifetime and coincidence Doppler measurements with ab initio calculations, we identify in-grown VAl−ON complexes in the concentration range 10 exp 18 cm exp −3 as the dominant form of VAl in the AlN single crystals, while isolated VAl were introduced by irradiation. Further, we identify the UV absorption feature at around 360 nm that involves VAl.Description
Keywords
AlN, vacancies, positrons, absorption
Other note
Citation
Mäki, J.-M. & Makkonen, I. & Tuomisto, Filip & Karjalainen, A. & Suihkonen, S. & Räisänen, J. & Chemekova, T. Yu. & Makarov, Yu. N. 2011. Identification of the VAl-ON defect complex in AlN single crystals. Physical Review B. Volume 84, Issue 8. 081204/1-4. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.84.081204
