Self-organized InP islands on (100) GaAs by metalorganic vapor phase epitaxy
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Journal Title
Journal ISSN
Volume Title
School of Electrical Engineering |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
1995
Major/Subject
Mcode
Degree programme
Language
en
Pages
3768-3770
Series
Applied Physics Letters, Volume 67, Issue 25
Abstract
The effect of growth temperature, deposition rate, and substrate misorientation angle on size, density, and uniformity of InP islands grown on (100) GaAs by metalorganic vapor phase epitaxy is investigated. The density of InP islands is observed to remain constant as a function of growth temperature in the temperature range of 620–680 °C. Below 620 °C the island density increases with decreasing temperature. Above 605 °C a subset of islands having a uniform size is observed. The degree of uniformity depends largely on the deposition rate and the size of the uniform islands on the growth temperature.Description
Keywords
metalorganic vapor phase epitaxy, indium phosphide islands
Other note
Citation
Sopanen, M. & Lipsanen, Harri & Ahopelto, J. 1995. Self-organized InP islands on (100) GaAs by metalorganic vapor phase epitaxy. Applied Physics Letters. Volume 67, Issue 25. P. 3768-3770. ISSN 0003-6951 (printed). DOI: 10.1063/1.115377.
