Phosphorus and boron diffusion gettering of iron in monocrystalline silicon
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Journal Title
Journal ISSN
Volume Title
School of Electrical Engineering |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2011
Major/Subject
Mcode
Degree programme
Language
en
Pages
5
Series
Journal of Applied Physics, Volume 109, Issue 9
Abstract
We have studied experimentally the phosphorus diffusion gettering (PDG) of iron in monocrystalline silicon at the temperature range of 650–800 °C. Our results fill the lack of data at low temperatures so that we can obtain a reliable segregation coefficient for iron between a phosphorus diffused layer and bulk silicon. The improved segregation coefficient is verified by time dependent PDG simulations. Comparison of the PDG to boron diffusion gettering (BDG) in the same temperature range shows PDG to be only slightly more effective than BDG. In general, we found that BDG requires more carefully designed processing conditions than PDG to reach a high gettering efficiency.Description
Keywords
phosphorus diffusion gettering, PDG, iron, monocrystalline silicon, solar cells, boron diffusion gettering, BDG, wafer, silicon
Other note
Citation
Talvitie, Heli & Vähänissi, Ville & Haarahiltunen, Antti & Yli-Koski, Marko & Savin, Hele. 2011. Phosphorus and boron diffusion gettering of iron in monocrystalline silicon. Journal of Applied Physics. Volume 109, Issue 9. 0021-8979 (printed). DOI: 10.1063/1.3582086.
