Nickel: A very fast diffuser in silicon
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Journal Title
Journal ISSN
Volume Title
School of Electrical Engineering |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2013
Major/Subject
Mcode
Degree programme
Language
en
Pages
7
Series
Journal of Applied Physics, Volume 113, Number 20
Abstract
Nickel is increasingly used in both IC and photovoltaic device fabrication, yet it has the potential to create highly recombination-active precipitates in silicon. For nearly three decades, the accepted nickel diffusivity in silicon has been DNi(T)=2.3×10exp−3 exp(−0.47 eV/kBT) cm2/s, a surprisingly low value given reports of rapid nickel diffusion in industrial applications. In this paper, we employ modern experimental methods to measure the higher nickel diffusivity DNi(T)=(1.69±0.74)×10exp−4 exp(−0.15±0.04 eV/kBT) cm2/s. The measured activation energy is close to that predicted by first-principles theory using the nudged-elastic-band method. Our measured diffusivity of nickel is higher than previously published values at temperatures below 1150 °C, and orders of magnitude higher when extrapolated to room temperature.Description
Keywords
solar cells, diffusion, nickel, silicon, wafer, integrated circuit devices, accumulation experiment, nickel diffusivity
Other note
Citation
Lindroos, Jeanette & Fenning, David P. & Backlund, Daniel J. & Verlage, Erik & Gorgulla, Angelika & Estreicher, Stefan K. & Savin, Hele & Buonassisi, Tonio. 2013. Nickel: A very fast diffuser in silicon. Journal of Applied Physics. Volume 113, Number 20. 0021-8979 (printed). DOI: 10.1063/1.4807799.
