Modeling boron diffusion gettering of iron in silicon solar cells
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School of Electrical Engineering |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2008
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Mcode
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Language
en
Pages
3
Series
Applied Physics Letters, Vol. 92, Issue 2
Abstract
In this paper, a model is presented for boron diffusion gettering of iron in silicon during thermal processing. In the model, both the segregation of iron due to high boron doping concentration and heterogeneous precipitation of iron to the surface of the wafer are taken into account. It is shown, by comparing simulated results with experimental ones, that this model can be used to estimate boron diffusion gettering efficiency of iron under a variety of processing conditions. Finally, the application of the model to phosphorus diffusion gettering is discussed.Description
Keywords
silicon, iron, solar cells, boron diffusion gettering, modeling, wafer, surface, B gettering, P gettering, BDG
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Citation
Savin, Hele & Talvitie, Heli & Yli-Koski, Marko & Haarahiltunen, Antti & Asghar, M.I & Sinkkonen, Juha. 2008. Modeling boron diffusion gettering of iron in silicon solar cells. Applied Physics Letters. Vol. 92, Issue 2. ISSN 0003-6951 (printed). DOI: 10.1063/1.2833698.
